 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : EN7692A 2SC4460M-SV SANYO Semiconductors DATA SHEET 2SC4460M-SV Features * * * * * NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage, High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW300s, duty cycle10% Conditions Ratings 1000 500 7 15 25 4 3 Tc=25C 55 150 --55 to +150 Unit V V V A A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=500V, IE=0A VEB=5V, IC=0A Ratings min typ max 10 10 Unit A A Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82907 TI IM TC-00000845 / 61504KB TS IM TA-100751 No.7692-1/4 2SC4460M-SV Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collectoe-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-On Time Storage Time Fall Time Symbol hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCEX(sus) ton tstg tf Conditions VCE=5V, IC=1.2A VCE=5V, IC=6A VCE=10V, IC=1.2A VCB=10V, f=1MHz IC=6A, IB=1.2A IC=6A, IB=1.2A IC=1mA, IE=0A IC=5mA, RBE= IE=1mA, IC=0A IC=5A, IB1=--IB2=2A, L=500H, clamped VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6 VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6 VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=28.6 1000 500 7 500 0.5 3.0 0.3 Ratings min 20 8 18 160 1 1.5 MHz pF V V V V V V s s s typ max 40 Unit Package Dimensions unit : mm (typ) 7505-002 3.4 5.0 8.0 Switching Time Test Circuit 16.0 5.6 3.1 PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 RB RL 28.6 + 470F VCC=200V 21.0 22.0 2.0 + 100F VBE= --5V 4.0 2.8 2.0 20.4 2.0 0.6 1.0 1 2 3 3.5 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML 5.45 5.45 12 IC -- VCE 1.4A 1.2A 1.0A 800mA 600mA 500mA 16 14 IC -- VBE VCE=5V 10 Collector Current, IC -- A Collector Current, IC -- A 12 10 8 6 4 2 0 8 6 400mA 4 300mA 200mA 100mA 2 50mA 20mA 0 2 4 6 8 IB=0mA 10 ITR07047 0 0 0.2 0.4 0.6 Ta = 12 0 C 25 C --40 C 0.8 1.0 1.2 ITR07048 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V No.7692-2/4 2SC4460M-SV 2 hFE -- IC VCE=5V 10 5 3 2 1.0 5 3 2 0.1 5 3 VCE(sat) -- IC IC / IB=5 100 DC Current Gain, hFE 7 5 3 2 25C --40C 10 7 5 3 2 5 0.1 2 5 1.0 2 5 = Ta 12 0C C --40 Collector Current, IC -- A 10 7 2 10 ITR07049 10 2 5 0.1 2 5 1.0 2 5 VBE(sat) -- IC IC / IB=5 Collector Current, IC -- A 2 10 ITR07050 SW Time -- IC tstg 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 Switching Time, SW Time -- s 5 3 2 1.0 7 5 3 2 0.1 7 5 0.1 1.0 Ta= --40C 7 5 3 2 2 5 0.1 2 5 1.0 2 5 2 10 ITR07051 25C 120C t on tf 2 3 5 7 1.0 2 3 5 7 2 10 ITR07052 100 5 2 Forward Bias A S O ICP=25A IC=15A <50s Collector Current, IC -- A 100 7 5 Reverse Bias A S O IB2= --2A L=100H Tc=25C Collector Current, IC -- A Collector Current, IC -- A 10 5 2 1.0 5 2 0.1 5 2 P DC C =55 W op era tio n Collector Current, IC -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 Test Circuit IB1 IB2 IC TUT L VR Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 --5V 10 2 3 5 VCC=20V 7 100 2 3 5 7 1000 2 IT06497 Collector-to-Emitter Voltage, VCE -- V 4 7 1000 ITR07053 5 Collector-to-Emitter Voltage, VCE -- V 60 55 PC -- Ta PC -- Tc Collector Dissipation, PC -- W 3 Collector Dissipation, PC -- W 50 40 2 No he at 30 sin k 20 1 10 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 150 160 ITR07056 Ambient Temperature, Ta -- C IT12925 Case Temperature, Tc -- C No.7692-3/4 25C Ta=120C Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 10 s 0 1m s 10 ms 2SC4460M-SV Transient Thermal Resistance, Rth(t) -- C / W 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.1 Rth(t) -- t Tc=25C 23 5 1.0 23 5 10 23 5 100 23 Time, t -- ms 5 1000 ITR07055 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No.7692-4/4 |
Price & Availability of 2SC4460M-SV
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |